Thermal conductivity of ultra low-k dielectrics

被引：62

作者：

Delan, A ^{[1
]}

Rennau, M ^{[1
]}

Schulz, SE ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09017 Chemnitz, Germany

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 70卷 / 2-4期

关键词：

low-k dielectric; thermal conductivity;

D O I：

10.1016/S0167-9317(03)00417-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The so-called 3omega measurement technique (transient hot wire method) was established to determine the thermal conductivity of thin films. Measurements of standard substrates and films validate the found thermal conductivity values and agree with published, commonly accepted values. The method was successfully applied to determine the thermal conductivity of porous low-k dielectric materials using special test structure fabrication. The thermal conductivity of the porous low-k dielectrics thus measured is only between 7 and 13% of the thermal conductivity of thermally grown silicon dioxide. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：280 / 284

页数：5

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