Effect of nanocrystallite anisotropy on porous silicon layer photoluminescence

被引：0
|
作者：
Sreseli, OM [1 ]
Kovalev, DI [1 ]
Bellyakov, LV [1 ]
Polisski, G [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2001年 / 65卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：295 / 297
页数：3
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