Interfaces in organic devices studied with resonant soft x-ray reflectivity

被引:26
|
作者
Yan, Hongping [1 ]
Wang, Cheng [2 ]
Garcia, Andres [3 ]
Swaraj, Sufal [1 ,4 ]
Gu, Ziran [1 ]
McNeill, Christopher R. [5 ]
Schuettfort, Torben [5 ]
Sohn, Karen E. [7 ]
Kramer, Edward J. [6 ,7 ]
Bazan, Guillermo C. [3 ,7 ]
Thuc-Quyen Nguyen [3 ]
Ade, Harald [1 ]
机构
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[3] Univ Calif Santa Barbara, Dept Chem & Biochem, Santa Barbara, CA 93106 USA
[4] Synchrotron SOLEIL, LOrme Merisiers, F-91192 Gif Sur Yvette, France
[5] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England
[6] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[7] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
基金
英国工程与自然科学研究理事会; 美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; SOLAR-CELLS; THIN-FILMS; CONJUGATED POLYMERS; CHARGE-TRANSPORT; SCATTERING; PERFORMANCE; MORPHOLOGY; TRANSMISSION; TRANSISTORS;
D O I
10.1063/1.3661991
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interfaces between donor and acceptor semiconducting polymers are critical to the performance of polymer light-emitting diodes and organic solar cells. Similarly, interfaces between a conjugated polymer and a dielectric play a critical role in organic thin-film transistors. Often, these interfaces are difficult to characterize with conventional methods. Resonant soft x-ray reflectivity (R-SoXR) is a unique and relatively simple method to investigate such interfaces. R-SoXR capabilities are exemplified by presenting or discussing results from systems spanning all three device categories. We also demonstrate that the interfacial widths between active layers can be controlled by annealing at elevated temperature, pre-annealing of the bottom layer, or casting from different solvent mixtures. The extension of R-SoXR to the fluorine K absorption edge near 698 eV is also demonstrated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3661991]
引用
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页数:9
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