Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy

被引：6

作者：

Seong, TY

Kim, DG

Jang, DH

Lee, JK

机构：

[1] KWANGJU INST SCI & TECHNOL,CTR ELECT MAT RES,KWANGJU 506303,SOUTH KOREA

[2] ELECT & TELECOMMUN RES INST,COMPOUND SEMICOND DEVICES SECT,TAEJON 305600,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 11期

关键词：

ordering; GaInP; GaInAsP; doping; transmission electron microscope (TEM); transmission electron diffraction (TED); MOVPE;

D O I：

10.1143/JJAP.35.5607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been made of Zn- and Si-doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on (001) GaAs substrates to examine CuPt-type atomic ordering and associated domain structures. The ordering was dependent on the doping levels of Si and Zn atoms. The ordering was also found to depend on composition variations in GaInAsP layers, As for the GaInP layer, the ordered domains as viewed in [001] plan-view showed complicated structures with a density of antiphase boundaries (APBs) and were of width similar to 0.5 to similar to 1.2 mu m. It was suggested that surface steps associated with surface undulations have a major influence on the domain structures. Mechanisms were proposed to explain how the domain structures arise.

引用

页码：5607 / 5611

页数：5