Correlation Between Reflectance and Photoluminescent Properties Of Al-rich ZnO Nano-Structures

被引：21
作者：
Khan, Firoz [1 ]
Baek, Seong-Ho [1 ]
Ahmad, Nafis [2 ]
Lee, Gun Hee [3 ]
Seo, Tae Hoon [3 ]
Suh, Eun-Kyung [3 ]
Kim, Jae Hyun [1 ]
机构：
[1] Daegu Gyeongbuk Inst Sci & Technol, Energy Res Div, 50-1 Sang Ri, Daegu 711873, South Korea
[2] Galgotias Coll Engn & Technol, Applied Sci & Humanities, Greater Noida 201306, UP, India
[3] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
来源：
METALS AND MATERIALS INTERNATIONAL | 2015年 / 21卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Nanostructured materials; sol-gel; optical properties; X-ray diffraction; photoluminescence; DOPED ZINC-OXIDE; SOLAR-CELLS; FILMS; TRANSPARENT; SURFACE; PASSIVATION; SPECTRA;
D O I：
10.1007/s12540-015-4376-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 degrees C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (I-NBE) was found to increase with the increase of the annealing temperature up to 600 degrees C, then to decrease fast to a lower value for the annealing temperature of 700 degrees C due to crystalline quality The Raman peak of E-2 (low) was red shifted from 118 cm(-1) to 126 cm(-1) with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm(-1) was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 degrees C. A special correlation was found between the reflectance at lambda = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.
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收藏
页码：561 / 568
页数：8
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