1/f noise in ion sensitive field effect transistors from subthreshold to saturation

被引：47

作者：

Jakobson, CG ^{[1
]}

Nemirovsky, Y

机构：

[1] Technion Israel Inst Technol, Dept Biomed Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Elect Engn, Microelect Res Ctr, IL-32000 Haifa, Israel

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 01期

关键词：

Electric frequency measurement - Electric potential - pH - Spurious signal noise;

D O I：

10.1109/16.737468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present paper presents extensive measurements of low frequency noise in pH ion sensitive field effect transistors (ISFET's) under various bias conditions corresponding to the gate voltage changing from subthreshold to saturation, in the frequency range between 1 Hz and 100 kHz. The noise measurements were performed in solutions with pH in the range of pH4 to pH10, at room temperature. In contrast to previously reported results, the measured ISFET's exhibit clearly 1/f noise down to 1 Hz.

引用

页码：259 / 261

页数：3

共 14 条

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