Quantum confinement effect in self-assembled, nanometer silicon dots

被引：44

作者：

Ding, SA ^{[1
]}

Ikeda, M ^{[1
]}

Fukuda, M ^{[1
]}

Miyazaki, S ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 26期

关键词：

D O I：

10.1063/1.122923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. (C) 1998 American Institute of Physics. [S0003-6951(98)02052-X].

引用

页码：3881 / 3883

页数：3

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