Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties

被引：4

作者：

Ishitani, Yoshihiro ^{[1
]}

Fujiwara, Masayuki ^{[1
]}

Wang, Xinqiang ^{[1
]}

Che, Song-Bek ^{[1
]}

Yoshikawa, Akihiko ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

MODES;

D O I：

10.1002/pssc.200880949

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Infrared reflectance and ellipsometry measurements are applied in order to study the influence of Mg-doping on the properties of hexagonal InN films. Reflectance spectrum characteristics reveal the large effective mass and large plasmon damping rate just in the region where net acceptors have been observed by electrolyte capacitance-voltage technique. The numerical spectrum analysis accounting for the modulation of the normal mode energies of longitudinal optical phonon-plasmon coupling (LOPC) by the large hole scattering rate yields the hole density of (0.1-1.2) x10(19) cm(-3) and optical mobility of 25-70 cm(2)/Vs for the direction vertical to the c axis. The properties of the bulk-like part of the films are determined by the optical techniques. Infrared ellipsometry on the study of anisotropy of LOPC mode broadening indicates that threading dislocations or columnar grain boundaries cause the significantly larger scattering rate for holes vibrating along the c axis than those vibrating vertical to the c axis. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S397 / S400

页数：4

共 17 条

[11] Dielectric function of cubic InN from the mid-infrared to the visible spectral range [J].

Schley, P. ;

Goldhahn, R. ;

Napierala, C. ;

Gobsch, G. ;

Schoermann, J. ;

As, D. J. ;

Lischka, K. ;

Feneberg, M. ;

Thonke, K. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (05)

[12] Infrared dielectric anisotropy and phonon modes of sapphire [J].

Schubert, M ;

Tiwald, TE ;

Herzinger, CM .

PHYSICAL REVIEW B, 2000, 61 (12) :8187-8201

[13] Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C [J].

Songprakob, W ;

Zallen, R ;

Liu, WK ;

Bacher, KL .

PHYSICAL REVIEW B, 2000, 62 (07) :4501-4510

[14] Temperature dependence of mobility and carrier density in InN films [J].

Thakur, JS ;

Naik, R ;

Naik, VM ;

Haddad, D ;

Auner, GW ;

Lu, H ;

Schaff, WJ .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)

[15] Growth and properties of Mg-doped in-polar InN films [J].

Wang, Xinqiang ;

Che, Song-Bek ;

Ishitani, Yoshihiro ;

Yoshikawa, Akihiko .

APPLIED PHYSICS LETTERS, 2007, 90 (20)

[16] Hole mobility in Mg-doped p-type InN films [J].

Wang, Xinqiang ;

Che, Song-Bek ;

Ishitani, Yoshihiro ;

Yoshikawa, Akihiko .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[17] Effects of surface states on electrical characteristics of InN and In1-xGaxN [J].

Yim, J. W. L. ;

Jones, R. E. ;

Yu, K. M. ;

Ager, J. W., III ;

Walukiewicz, W. ;

Schaff, William J. ;

Wu, J. .

PHYSICAL REVIEW B, 2007, 76 (04)

← 1 2 →