Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties

被引：4
作者：
Ishitani, Yoshihiro [1 ]
Fujiwara, Masayuki [1 ]
Wang, Xinqiang [1 ]
Che, Song-Bek [1 ]
Yoshikawa, Akihiko [1 ]
机构：
[1] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷
关键词：
MODES;
D O I：
10.1002/pssc.200880949
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Infrared reflectance and ellipsometry measurements are applied in order to study the influence of Mg-doping on the properties of hexagonal InN films. Reflectance spectrum characteristics reveal the large effective mass and large plasmon damping rate just in the region where net acceptors have been observed by electrolyte capacitance-voltage technique. The numerical spectrum analysis accounting for the modulation of the normal mode energies of longitudinal optical phonon-plasmon coupling (LOPC) by the large hole scattering rate yields the hole density of (0.1-1.2) x10(19) cm(-3) and optical mobility of 25-70 cm(2)/Vs for the direction vertical to the c axis. The properties of the bulk-like part of the films are determined by the optical techniques. Infrared ellipsometry on the study of anisotropy of LOPC mode broadening indicates that threading dislocations or columnar grain boundaries cause the significantly larger scattering rate for holes vibrating along the c axis than those vibrating vertical to the c axis. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
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页码：S397 / S400
页数：4
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