ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

被引：194

作者：

Karpov, Sergey ^{[1
]}

机构：

[1] Soft Impact Ltd, STR Grp, St Petersburg 194156, Russia

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 06期

关键词：

III-Nitrides; Light-emitting diodes; Recombination; Efficiency droop; ABC-model; AUGER RECOMBINATION; LIGHT; ORIGIN;

D O I：

10.1007/s11082-014-0042-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reviews applications of ABC-model to interpret internal quantum efficiency and its droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and tentative mechanisms responsible for deviation of the model predictions from available observations are discussed. New experimental information on recombination processes in the LED active regions coming in terms of the ABC-model is considered along with still open questions and tasks for further experimental and theoretical studies.

引用

页码：1293 / 1303

页数：11

共 44 条

[11] Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. .

APPLIED PHYSICS LETTERS, 2010, 97 (03)

[12] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. ;

Kaeding, John F. ;

Gardner, Nathan F. ;

Mihopoulos, Theodoros G. ;

Krames, Michael R. .

APPLIED PHYSICS LETTERS, 2008, 92 (05)

[13] NONTHRESHOLD AUGER RECOMBINATION IN QUANTUM-WELLS [J].

DYAKONOV, MI ;

KACHOROVSKII, VY .

PHYSICAL REVIEW B, 1994, 49 (24) :17130-17138

[14] Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells [J].

Eliseev, PG ;

Osin'ski, M ;

Li, H ;

Akimova, IV .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3838-3840

[15] Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (λ=630 nm) quantum dots [J].

Frost, Thomas ;

Banerjee, Animesh ;

Jahangir, Shafat ;

Bhattacharya, Pallab .

APPLIED PHYSICS LETTERS, 2014, 104 (08)

[16] Temperature-dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum-well diodes [J].

Fujiwara, Kenzo ;

Jimi, Hiroyuki ;

Kaneda, Kei .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 :S814-S817

[17] Auger recombination in 4H-SiC: Unusual temperature behavior [J].

Galeckas, A ;

Linnros, J ;

Grivickas, V ;

Lindefelt, U ;

Hallin, C .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3269-3271

[18] Investigation of the carrier distribution in InGaN-based multi-quantum-well structures [J].

Galler, B. ;

Laubsch, A. ;

Wojcik, A. ;

Lugauer, H. ;

Gomez-Iglesias, A. ;

Sabathil, M. ;

Hahn, B. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2372-2374

[19] Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells [J].

Galler, Bastian ;

Lugauer, Hans-Juergen ;

Binder, Michael ;

Hollweck, Richard ;

Folwill, Yannick ;

Nirschl, Anna ;

Gomez-Iglesias, Alvaro ;

Hahn, Berthold ;

Wagner, Joachim ;

Sabathil, Matthias .

APPLIED PHYSICS EXPRESS, 2013, 6 (11)

[20] Temperature-dependence of the internal efficiency droop in GaN-based diodes [J].

Hader, J. ;

Moloney, J. V. ;

Koch, S. W. .

APPLIED PHYSICS LETTERS, 2011, 99 (18)

← 1 2 3 4 5 →