ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

被引:194
作者
Karpov, Sergey [1 ]
机构
[1] Soft Impact Ltd, STR Grp, St Petersburg 194156, Russia
关键词
III-Nitrides; Light-emitting diodes; Recombination; Efficiency droop; ABC-model; AUGER RECOMBINATION; LIGHT; ORIGIN;
D O I
10.1007/s11082-014-0042-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper reviews applications of ABC-model to interpret internal quantum efficiency and its droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and tentative mechanisms responsible for deviation of the model predictions from available observations are discussed. New experimental information on recombination processes in the LED active regions coming in terms of the ABC-model is considered along with still open questions and tasks for further experimental and theoretical studies.
引用
收藏
页码:1293 / 1303
页数:11
相关论文
共 44 条
[1]  
Bertazzi F., 2012, APPL PHYS LETT, V103
[2]   Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence [J].
Binder, M. ;
Nirschl, A. ;
Zeisel, R. ;
Hager, T. ;
Lugauer, H. -J. ;
Sabathil, M. ;
Bougeard, D. ;
Wagner, J. ;
Galler, B. .
APPLIED PHYSICS LETTERS, 2013, 103 (07)
[3]   Current crowding effect on light extraction efficiency of thin-film LEDs [J].
Bogdanov, M. V. ;
Bulashevich, K. A. ;
Khokhlev, O. V. ;
Evstratov, I. Yu. ;
Ramm, M. S. ;
Karpov, S. Yu. .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)
[4]   Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes? [J].
Bulashevich, K. A. ;
Karpov, S. Yu. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :2066-+
[5]   Simulation of light-emitting diodes for new physics understanding and device design [J].
Bulashevich, K. A. ;
Khokhlev, O. V. ;
Evstratov, I. Yu. ;
Karpov, S. Yu. .
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI, 2012, 8278
[6]   Recent development in high brightness LEDs - art. no. 691005 [J].
Chen, T. P. ;
Yao, C. L. ;
Wu, C. Y. ;
Yeh, J. H. ;
Wang, C. W. ;
Hsieh, M. H. .
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS XII, 2008, 6910 :91005-91005
[7]   Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].
Chichibu, Shigefusa F. ;
Uedono, Akira ;
Onuma, Takeyoshi ;
Haskell, Benjamin A. ;
Chakraborty, Arpan ;
Koyama, Takahiro ;
Fini, Paul T. ;
Keller, Stacia ;
Denbaars, Steven P. ;
Speck, James S. ;
Mishra, Umesh K. ;
Nakamura, Shuji ;
Yamaguchi, Shigeo ;
Kamiyama, Satoshi ;
Amano, Hiroshi ;
Akasaki, Isamu ;
Han, Jung ;
Sota, Takayuki .
NATURE MATERIALS, 2006, 5 (10) :810-816
[8]   On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms [J].
Dai, Qi ;
Shan, Qifeng ;
Cho, Jaehee ;
Schubert, E. Fred ;
Crawford, Mary H. ;
Koleske, Daniel D. ;
Kim, Min-Ho ;
Park, Yongjo .
APPLIED PHYSICS LETTERS, 2011, 98 (03)
[9]   Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes [J].
Dai, Qi ;
Shan, Qifeng ;
Wang, Jing ;
Chhajed, Sameer ;
Cho, Jaehee ;
Schubert, E. Fred ;
Crawford, Mary H. ;
Koleske, Daniel D. ;
Kim, Min-Ho ;
Park, Yongjo .
APPLIED PHYSICS LETTERS, 2010, 97 (13)
[10]   Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis [J].
David, Aurelien ;
Grundmann, Michael J. .
APPLIED PHYSICS LETTERS, 2010, 96 (10)