Na-doped ZnO nanorods fabricated by chemical vapor deposition and their optoelectrical properties

被引：76
作者：
Ye, Zhixiang [1 ,2 ,3 ]
Wang, Ting [1 ,2 ,3 ]
Wu, Shuang [1 ]
Ji, Xiaohong [1 ]
Zhang, Qinyuan [1 ,2 ,3 ]
机构：
[1] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China
[2] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
[3] South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 690卷
基金：
中国国家自然科学基金;
关键词：
Na-doped ZnO nanorods; P-type; Chemical vapor deposition; Low-temperature photoluminescence; Shallow acceptor; TEMPERATURE-DEPENDENCE; ZINC-OXIDE; NANOWIRES; PHOTOLUMINESCENCE; CONDUCTIVITY; EXCITON; ENERGY; FILM;
D O I：
10.1016/j.jallcom.2016.08.100
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Na-doped ZnO (ZnO:Na) nanorods have been grown on Si substrates by a catalyst-free chemical vapor deposition method. Element analysis reveals that the doping concentration of Na is in the range of 0.5 -3.7 at.%. Morphological and electrical properties of the ZnO nanorods were found to be highly dependent on the Na concentration. Hall measurement indicates the realization of p-ZnO:Na nanorods with hole concentrations in the order of 10(15) cm(-3). Temperature dependent photoluminescence measurement down to 10 K confirms the shallow acceptor level, which is similar to 132 meV. Desirable rectifying behavior has also been observed from the characteristic of the p-ZnO:Na nanorods/ZnO/n-Si structure and the turn on voltage is similar to 2.5 V. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：189 / 194
页数：6
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