Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

被引：1

作者：

Cheng, Chin-Lung ^{[2
]}

Liu, Chien-Wei ^{[1
]}

Dai, Bau-Tong ^{[3
]}

Lee, Ming-Yen ^{[4
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Dept Mech Engn, Yunlin 64054, Taiwan

[2] Natl Formosa Univ, Dept Electroopt Engn, Yunlin 63201, Taiwan

[3] Natl Appl Res Labs, Natl Nano Device Labs, Hsinchu 30078, Taiwan

[4] Natl Formosa Univ, Inst Mat Sci & Green Energy Engn, Yunlin 63201, Taiwan

来源：

JOURNAL OF NANOMATERIALS | 2011年 / 2011卷

关键词：

CIRCUITS;

D O I：

10.1155/2011/125846

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5-7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2 as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage (I-d-V-d), drain current versus gate voltage (I-d-V-g), mobility, subthreshold slope (SS), and transconductance (G(m)), were obtained.

引用

页数：7