Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors

被引：9

作者：

Dolas, M. Halit ^{[1
]}

Kocaman, Serdar ^{[1
]}

机构：

[1] Middle East Tech Univ, TR-06800 Ankara, Turkey

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 12期

关键词：

Fully depleted; heterojunction; InGaAs; in-device passivation; InP passivation; p-n diodes; SWIR; LOW DARK-CURRENT; N PHOTODIODE;

D O I：

10.1109/LED.2017.2763616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.

引用

页码：1692 / 1695

页数：4

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