Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

被引：2

作者：

Bowers, John E. ^{[1
]}

Dai, Daoxin ^{[1
]}

Zaoui, W. S. ^{[1
]}

Kang, Yimin ^{[2
]}

Morse, Mike ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

来源：

2010 IEEE PHOTONICS SOCIETY WINTER TOPICALS MEETING SERIES | 2010年

关键词：

D O I：

10.1109/PHOTWTM.2010.5421935

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A resonant Ge/Si APD with the SACM (separate-absorption-charge-multiplication) structure is presented. Due to the resonance effect in the avalanche region, the Ge/Si APD shows an ultra-high gain-band products (GBP) (860GHz). This may make it possible to generate electrical data directly without a TIA (trans-impedance-amplifier). Consequently, the receiver based on the resonant Ge/Si APD may be cheaper, smaller and lower power than existing approaches.

引用

页码：111 / +

页数：2

共 3 条

[1] Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes [J].

Dai, Daoxin ;

Chen, Hui-Wen ;

Bowers, John E. ;

Kang, Yimin ;

Morse, Mike ;

Paniccia, Mario J. .

OPTICS EXPRESS, 2009, 17 (19) :16549-16557

[2] Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product [J].

Kang, Yimin ;

Liu, Han-Din ;

Morse, Mike ;

Paniccia, Mario J. ;

Zadka, Moshe ;

Litski, Stas ;

Sarid, Gadi ;

Pauchard, Alexandre ;

Kuo, Ying-Hao ;

Chen, Hui-Wen ;

Zaoui, Wissem Sfar ;

Bowers, John E. ;

Beling, Andreas ;

McIntosh, Dion C. ;

Zheng, Xiaoguang ;

Campbell, Joe C. .

NATURE PHOTONICS, 2009, 3 (01) :59-63

[3] Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product [J].

Zaoui, Wissem Sfar ;

Chen, Hui-Wen ;

Bowers, John E. ;

Kang, Yimin ;

Morse, Mike ;

Paniccia, Mario J. ;

Pauchard, Alexandre ;

Campbell, Joe C. .

OPTICS EXPRESS, 2009, 17 (15) :12641-12649

← 1 →