Effects of Si doping in the barriers on the optical properties of In0.15Ga0.85N/In0.015 Ga0.985N multiple quantum wells

被引：2

作者：

Ryu, MY ^{[1
]}

Yu, YJ

Yu, PW

Shin, EJ

Lee, JI

Yu, SK

Oh, ES

Nam, OH

Sone, CS

Park, YJ

机构：

[1] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[2] Korea Res Inst Stand & Sci, Optoelect Grp, Taejon 305600, South Korea

[3] Samsung Adv Inst Technol, Compound Semicond Lab, Suwon 440600, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2000年 / 37卷 / 06期

关键词：

D O I：

10.3938/jkps.37.989

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied the effects of Si doping on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N multiple quantum wells (MQWs) by using photoluminescence (PL) and time-resolved PL measurements. The Si doping concentration in the In0.015Ga0.985N barriers was varied from 2 x 10(18) to 1 x 10(19) cm(-3). As the Si doping was increased, the PL showed an increase in the emission intensity and a blueshift of the peak energy. The temporal behavior of the PL was also studied. The 10-K recombination lifetime depended strongly on the Si doping level in the InGaN barriers, decreasing from similar to 80 ns to similar to 20 ns as the doping level increased from 2 x 10(18) to 1 x 10(19) cm(-3). The emission peaks shifted towards lower energy as time evolved.

引用

页码：989 / 992

页数：4

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