Vertically aligned nitrogen doped (Sn,Nb)O2 nanotubes - Robust photoanodes for hydrogen generation by photoelectrochemical water splitting

被引：24
作者：
Patel, Prasad Prakash [1 ]
Hanumantha, Prashanth Jampani [2 ]
Velikokhatnyi, Oleg I. [2 ,3 ]
Datta, Moni Kanchan [2 ,3 ]
Gattu, Bharat [1 ]
Poston, James A. [4 ]
Manivannan, Ayyakkannu [4 ]
Kumta, Prashant N. [1 ,2 ,3 ,5 ,6 ]
机构：
[1] Univ Pittsburgh, Dept Chem & Petr Engn, Swanson Sch Engn, 818 Benedum Hall,3700 OHara St, Pittsburgh, PA 15261 USA
[2] Univ Pittsburgh, Dept Bioengn, Swanson Sch Engn, 815C Benedum Hall, Pittsburgh, PA 15261 USA
[3] Univ Pittsburgh, Ctr Complex Engn Multifunct Mat, Pittsburgh, PA 15261 USA
[4] US DOE, Natl Energy Technol Lab, Morgantown, WV 26507 USA
[5] Univ Pittsburgh, Mech Engn & Mat Sci, Swanson Sch Engn, Pittsburgh, PA 15261 USA
[6] Univ Pittsburgh, Sch Dent Med, Pittsburgh, PA 15217 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2016年 / 208卷
基金：
美国国家科学基金会;
关键词：
Photoelectrochemical water splitting; Nanotubes; Tin oxide; Doped metal oxide; Nitrogen doping; ZNO NANOWIRE ARRAYS; VISIBLE-LIGHT; HIGH-PERFORMANCE; PHOTOCATALYTIC ACTIVITY; OPTICAL-PROPERTIES; ZINC-OXIDE; ELECTRONIC-STRUCTURE; OXYGEN EVOLUTION; NANOROD ARRAYS; TIO2;
D O I：
10.1016/j.mseb.2016.02.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogen generation from photoelectrochemical (PEC) water splitting is on the forefront of clean energy generation landscape. The efficiency of PEC system is dependent on the engineering of semiconductors with tailored narrow band gap coupled with superior photoelectrochemical activity and desired stability vital for the commercialization of PEC water splitting cells. We report herein the study of vertically aligned Nb and N doped SnO2 nanotubes (NTs), i.e., (Sn0.95Nb0.05)O-2: N NTs for PEC water splitting. (Sn0.95Nb0.05)O-2 NTs was selected for co-doping with nitrogen by systematic analysis of applied bias photon-to-current efficiency of various Nb doped SnO2 (x=0-0.1) compositions. Consequently, excellent photoelectrochemical stability and the highest efficiency of 4.1% is obtained for (Sn0.95Nb0.05)O-2:N-600 NTs never observed for other known TiO2, ZnO, and Fe2O3 systems to date. Additionally, theoretical first principles study provides understanding of Nb and N co-doping on the electronic structure and band gap of SnO2 semiconductor, further corroborating results of the experimental study. (C) 2016 Elsevier B.V. All rights reserved.
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页码：1 / 14
页数：14
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