Correlation between photoelectrochemical and photoluminescence measurements of Ag-doped ZnO/ITO photoanode

被引:15
作者
Dridi, Donia [1 ,2 ]
Litaiem, Yousra [2 ]
Karyaoui, Mokhtar [2 ]
Chtourou, Radhouane [2 ]
机构
[1] Univ Carthage, Fac Sci Bizerte, Tunis, Tunisia
[2] Technopole Borj Cedria, Res & Technol Ctr Energy, Lab Nanomat & Syst Renewable Energies LaNSER, Tunis, Tunisia
关键词
ZNO THIN-FILMS; GAS-SENSING PROPERTIES; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; SOL; ELECTRODEPOSITION; TRANSPARENT; ENHANCEMENT; PERFORMANCE;
D O I
10.1051/epjap/2019180312
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silver-doped zinc oxide (SZO) thin films have been deposited onto indium-doped tin oxide substrates (ITO) using sol gel spin-coating technique with different Ag doping content (1, 2 and 5% Ag). The effect of silver incorporation on structural, morphological, optical and photoelectrochemical (PEC) properties of the SZO films was investigated. Ag incorporation resulted in an enhanced grain size and thickness of elaborated SZO films Scanning electron micrographs exhibited a uniform distribution of spherical grains with particle size increment after doping. Band gap energies were found to increase after Ag doping. Photoluminescence (PL) measurements revealed that the energy band gaps of the films were in the UV region. As compared to pure ZnO thin film, the samples are more photoactive, and the film containing 2% Ag yielded the highest photocurrent. A correlation study between PEC and PL measurements of Ag-doped ZnO/ITO photoanode leads to a reverse variation. Charge transfer processes at the ZnO electrolyte interface were identified by electrochemical impedance spectroscopy.
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页数:11
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