A Neural Recording Amplifier Based on Adaptive SNR Optimization Technique for Long-Term Implantation

被引:0
作者
Lee, Taeju [1 ]
Jang, Doojin [1 ]
Jung, Yoontae [1 ]
Jeon, Hyuntak [1 ]
Hong, Soonyoung [2 ]
Han, Sungmin [3 ]
Chu, Jun-Uk [4 ]
Lee, Junghyup [2 ]
Je, Minkyu [1 ]
机构
[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon, South Korea
[2] Daegu Gyeongbuk Inst Sci Technol DGIST, Dept Informat & Commun Engn, Daegu, South Korea
[3] Korea Inst Sci & Technol KIST, Biomed Res Inst, Seoul, South Korea
[4] Korea Inst Machinery & Mat KIMM, Daegu Res Ctr Med Devices & Rehabil Engn, Daegu, South Korea
来源
2017 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS) | 2017年
基金
新加坡国家研究基金会;
关键词
Long-term neural recording; foreign body reaction; signal-to-noise ratio optimization; adaptive neural recording amplifier;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Long-term neural recording which can consistently provide good signal-to-noise ratio (SNR) performance over time is important for stable operation of neuroprosthetic systems. This paper presents an analysis for the SNR optimization in a changing environment which causes variations in the tissue-electrode impedance, Z(TE). Based on the analysis result, a neural recording amplifier (NRA) is developed employing the SNR optimization technique. The NRA can adaptively change its configuration for in situ SNR optimization. The SNR is improved by 4.69% to 23.33% as Z(TE) changes from 1.59 M Omega to 31.8 M Omega at 1 kHz. The NRA is fabricated in a 0.18-mu m standard CMOS process and operates at 1.8-V supply while consuming 1.6 mu A. It achieves an input-referred noise of 4.67 mu V-rms when integrated from 1 Hz to 10 kHz, which leads to the NEF of 2.27 and the (NEFVDD)-V-2 of 9.28. The frequency reponse is measured with a high-pass cutoff frequency of 1 Hz and a low-pass cutoff frequency of 10 kHz. The midband gain is set to 40 dB while occupying 0.11 mm(2) of a chip area.
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页数:4
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