IV-VI mid-infrared VECSEL on Si-substrate

被引：2

作者：

Fill, M. ^{[1
,2
]}

Felder, F. ^{[1
,2
]}

Rahim, M. ^{[1
]}

Khiar, A. ^{[1
]}

Rodriguez, R. ^{[1
]}

Zogg, H. ^{[1
]}

Ishida, A. ^{[3
]}

机构：

[1] Swiss Fed Inst Technol, Thin Film Phys Grp, Technoparkstr 1, CH-8005 Zurich, Switzerland

[2] Phocone AG, CH-8005 Zurich, Switzerland

[3] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

来源：

VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) II | 2012年 / 8242卷

关键词：

MU-M;

D O I：

10.1117/12.905643

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si cover the entire wavelength range between 3.0 and 10 mu m. Thanks to their simple structure and large wavelength coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mW(p). Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 mu m. The single emission mode is continuously tunable over 50-100 nm around the center wavelength, yielding an output power >10 mW(p). The axial symmetric emission beam has a half divergence angle of <3.3 degrees.

引用

页数：11

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