Grain boundaries between bismuth nanocrystals

被引：10
作者：
Kowalczyk, P. J. [1 ,2 ]
Belic, D. [2 ]
Mahapatra, O. [2 ]
Brown, S. A. [2 ]
机构：
[1] Univ Lodz, Dept Solid State Phys, PL-90236 Lodz, Poland
[2] Univ Canterbury, Dept Phys & Astron, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand
来源：
ACTA MATERIALIA | 2012年 / 60卷 / 02期
关键词：
Bismuth; STM; HR-TEM; SEM; Grain boundaries; THIN BI FILMS; ORIENTATION TRANSITION; ELECTRON-MICROSCOPY; ROOM-TEMPERATURE; GRAPHITE; GROWTH; BICRYSTALS; STM; INTERFACE; SURFACES;
D O I：
10.1016/j.actamat.2011.09.041
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Grain boundaries in thin Bi(1 1 0) films deposited on highly oriented pyrolytic graphite are investigated at atomic resolution using scanning tunnelling microscopy and high-resolution transmission electron microscopy. We find preferred misorientation angles Theta equal to 216 degrees, 87 degrees, 49 degrees, 310 degrees, 200 degrees, 12 degrees and 5 degrees, the majority of which can be classified as large-angle boundaries. We find good agreement between the experimental results and a model of the tilt [1 1 0] grain boundary developed here. A method for estimating the surface unit cell based on measurement of dihedral angle in low-resolution images is also developed. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：674 / 681
页数：8
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