Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

被引:9
作者
Chen, YF [1 ]
Lee, WN
Huang, JH
Chin, TS
Huang, RT
Chen, FR
Kai, JJ
Aravind, K
Lin, IN
Ku, HC
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
[3] Tamkang Univ, Dept Phys, Taipei 251, Taiwan
[4] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 04期
关键词
D O I
10.1116/1.1993598
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-assembled In0.79Mn0.21As quantum dots were successfully grown on GaAs (001) substrates by low-temperature molecular beam epitaxy. Atomic force microscopy and high-resolution transmission electron microscopy confirm the formation of quantum dots. High-resolution lattice image suggests that In0.79Mn0.21As dots are single phase with zinc-blend structure. The dots exhibit typical ferromagnetic state at 5 K and demonstrate a Curie temperature of similar to 290 K which is much higher than those of (In, Mn)As diluted magnetic semiconductor alloys ever reported. The significant increase in Curie temperature can be attributed to the much higher Mn content in the dots, and the possible enhancement of the hybridization strength between the quantum confined holes in the dots and the itinerant holes in the semiconductor valence band. (c) 2005 American Vacuum Society.
引用
收藏
页码:1376 / 1378
页数:3
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