Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure

被引：89

作者：

Wu, E ^{[1
]}

Nowak, E ^{[1
]}

Aitken, J ^{[1
]}

Abadeer, W ^{[1
]}

Han, LK ^{[1
]}

Lo, S ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Essex Junction, VT 05452 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we report strong channel-length dependence and weak channel-width dependence of soft breakdown modes and device failure for ultra-thin gate oxides. For channel lengths around 0.2 mu m, oxide-breakdown events in FETs cause a sharp increase in FETs off-current which permanently degrades the switching performance of short-channel devices; this is not observed for longer channel length FETs. The results also indicate that both hard- and soft-breakdown events have a common origin but manifest themselves differently depending on the test structure and geometry being measured.

引用

页码：187 / 190

页数：4

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