Silicon Nitride/Silicon Dioxide Echelle Grating Spectrometer for Operation Near 1.55 μm

被引：8

作者：

Xie, Shengjie ^{[1
]}

Meng, Yang ^{[1
]}

Bland-Hawthorn, Joss ^{[2
,3
]}

Veilleux, Sylvain ^{[4
,5
]}

Dagenais, Mario ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Univ Sydney, Sch Phys, Sydney Inst Astron, Sydney, NSW 2006, Australia

[3] Univ Sydney, Sch Phys, Sydney Astrophoton Instrumentat Labs, Sydney, NSW 2006, Australia

[4] Univ Maryland, Dept Astron, College Pk, MD 20742 USA

[5] Univ Maryland, Joint Space Sci Inst, College Pk, MD 20742 USA

来源：

IEEE PHOTONICS JOURNAL | 2018年 / 10卷 / 06期

基金：

美国国家科学基金会;

关键词：

nanophotonics; spectroscopy; demultiplexing;

D O I：

10.1109/JPHOT.2018.2880182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here we use an electron beam lithography system to pattern an Si3N4/SiO2 echelle grating using silver as a reflector on the grating grooves. The grating in this letter achieves 1.39 dB on-chip loss, a spectral resolution of similar to 1300, a 1.2 dB channel nonuni-formity, and less than -30 dB adjacent channel crosstalk for the transverse electric field polarization. We establish that stitching errors can lead to appreciable adjacent channel crosstalk if proper precaution is not taken to minimize them.

引用

页数：7

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