Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography

被引：1

作者：

Kao, Chien-Chih ^{[1
,2
]}

Su, Yan-Kuin ^{[1
,2
,3
]}

Hsieh, Yi-Ta ^{[4
]}

Lee, Yung-Chun ^{[4
]}

Cheng, Chiao-Yang ^{[1
,2
]}

Lin, Chuing-Liang ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

[4] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 701, Taiwan

[5] Kun Shan Univ, Dept Electroopt Engn, Tainan 710, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

关键词：

OUTPUT POWER; LEDS;

D O I：

10.1143/APEX.4.062102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilitates superior light extraction efficiency. However, a suitable pattern size and etching depth should be chosen to obtain the highest quality of GaN film. In comparison with the conventional sapphire substrate, the largest light output enhancement (similar to 28.9%) was observed when the pattern diameter and the etching depth of PSS were 400 and 400 nm, respectively. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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