A Dual-Band Millimeter-Wave High-Gain Dielectric Resonator Antenna Using Vertical Assembly Technology

被引：0

作者：

Lin, Ta-Yeh ^{[1
,2
]}

Chiu, Tsenchieh ^{[2
]}

Chang, Yin-Cheng ^{[1
]}

Chang, Da-Chiang ^{[1
]}

Yen, Mao-Hsu ^{[3
]}

Chen, Chiu-Kuo ^{[4
]}

Lin, Ming-Shan ^{[4
]}

机构：

[1] Natl Chip Implementat Ctr, Hsinchu, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan

[3] Natl Taiwan Ocean Univ, Dept Comp Sci & Engn, Keelung, Taiwan

[4] Bur Stand Metrol & Inspect, MOEA, Taipei, Taiwan

来源：

2017 IEEE CPMT SYMPOSIUM JAPAN (ICSJ) | 2017年

关键词：

60-GHz; dielectric resonator antenna (DRA); on-chip antenna; IPD technology; millimeter-wave (mmW); WIRELESS COMMUNICATIONS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dual-band millimeter-wave (mmW) dielectric resonator antenna (DRA) in silicon based integrated passive device (IPD) technology for unlicensed V-band (57-64 GHz) and E-band (71-86 GHz) applications is proposed in this paper. In the proposed structure, dielectric resonator (DR) was fed by using vertical coupling feed architecture to improve the antenna efficiency and gains. The simulated results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with |S-11| less than -10 dB are from 57.6 to 62.1 GHz and from 77.1 to 81.2 GHz, respectively. The simulated gains are 5.1 dBi at 60 GHz and 5.9 dBi at 80 GHz, respectively. The proposed antenna is well suited for dual-band millimeter-wave high-gain wireless communication systems.

引用

页码：131 / 132

页数：2

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