Dynamical Study of Heat Transport Properties of Porous Silicon

被引：0

作者：

Gradauskas, Jonas ^{[1
,2
]}

Suziedelis, Algirdas ^{[1
,2
]}

Samuoliene, Neringa ^{[2
]}

Treideris, Marius ^{[1
]}

Vaicikauskas, Viktoras ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, LT-01108 Vilnius, Lithuania

[2] Vilnius Gediminas Tech Univ, LT-10223 Vilnius, Lithuania

来源：

MATERIALS SCIENCE-MEDZIAGOTYRA | 2015年 / 21卷 / 02期

关键词：

porous silicon; transient thermoelectric effect; thermal conductivity; thermoelectric material; THERMAL-CONDUCTIVITY;

D O I：

10.5755/j01.mm.21.2.5785

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new fast technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and analysis of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70 % porosity we show the value of 35 W.m(-1).K-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.

引用

页码：179 / 181

页数：3

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