Time-resolved photoluminescence properties of CuInS2/ZnS nanocrystals: Influence of intrinsic defects and external impurities

被引：74

作者：

Komarala, Vamsi K. ^{[1
,2
]}

Xie, Chuang ^{[3
,4
,5
]}

Wang, Yongqiang ^{[4
]}

Xu, Jian ^{[5
]}

Xiao, Min ^{[2
]}

机构：

[1] Indian Inst Technol Delhi, Ctr Energy Studies, New Delhi 110016, India

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[3] Tianjin Univ, State Key Lab Chem Engn, Sch Chem Engn & Technol, Tianjin 300072, Peoples R China

[4] Ocean NanoTech, Springdale, AR 72764 USA

[5] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 12期

基金：

美国国家科学基金会;

关键词：

Surface defects - Excited states - Photoluminescence - Indium compounds - Zinc compounds - Copper compounds;

D O I：

10.1063/1.4730345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) lifetime studies of CuInS2 nanocrystals (NCs) are carried out after synthesizing core-shell and compositionally variant structures using time-resolved PL spectroscopy. Long-lived excited state decay times are observed for the NCs, and decay times are very much dependent on the size of the CuInS2 NCs. The emission bands are attributed to the surface (shorter PL lifetime) and defect (longer PL lifetime) related trap states, respectively. The decay dynamics of the CuInS2 NC's excited-state carriers is very sensitive to the surface, intrinsic defects, and extrinsic impurities. The observed large Stokes shifts and broad PL spectra also reveal the involvement of the defect-related trapping sites in the emission process. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730345]

引用

页数：4

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