Depth dependent optoelectronic properties of Cu(In,Ga)Se2 with lateral resolution in the micron/submicron scale from luminescence studies

被引：8

作者：

Bauer, G. H. ^{[1
]}

Heise, S. J. ^{[1
]}

Knabe, S. ^{[1
]}

Neumann, O. ^{[1
]}

Brueggemann, R. ^{[1
]}

Hariskos, D. ^{[2
]}

Witte, W. ^{[2
]}

机构：

[1] Carl von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

来源：

EUROPEAN MATERIALS RESEARCH SOCIETY CONFERENCE SYMPOSIUM: ADVANCED INORGANIC MATERIALS AND CONCEPTS FOR PHOTOVOLTAICS | 2011年 / 10卷

关键词：

chalcopyrite; Cu(In; Ga)Se-2; thin-film absorbers; inhomogeneities; thickness dependence; confocal photoluminescence;

D O I：

10.1016/j.egypro.2011.10.179

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Optoelectronic properties relevant for photovoltaics, such as band gap, spectral absorption, and splitting of quasi-Fermi levels of chalcopyrites Cu(In,Ga)Se-2 have been analyzed by luminescence with lateral highly resolved methods, such as confocal photoluminescence (PL) (<= 1 mu m). In addition to the high lateral resolution we get access to depth profiles via different samples thicknesses provided by etching of standard samples. Amongst lateral fluctuations of band gap (up to few tens of meV), spectral absorption, and splitting of quasi-Fermi levels (Delta(EFn-EFp) approximate to (20-30) meV) we identify the increase in band gap corresponding to the rise in Ga content towards the rear contact; we also see by luminescence a substantial lateral fluctuation of the band gap which is interpreted as an according large lateral fluctuation of the extension of the Ga depth profile towards the front side. This observation agrees well with lateral variations of Delta(EFn-EFp) that cannot be consistently interpreted without sufficient spatial resolution. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Organizers of European Materials Research Society (EMRS) Conference: Symposium on Advanced Inorganic Materials and Concepts for Photovoltaics.

引用

页数：5

共 11 条

[1] Analysis of Cu(In,Ga)(S,Se)2 thin-film solar cells by means of electron microscopy [J].

Abou-Ras, D. ;

Dietrich, J. ;

Kavalakkatt, J. ;

Nichterwitz, M. ;

Schmidt, S. S. ;

Koch, C. T. ;

Caballero, R. ;

Klaer, J. ;

Rissom, T. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (06) :1452-1462

[2]

[Anonymous], 1984, Multidimensional Digital Signal Processing

[3]

[Anonymous], 2007, P 22 EUR PHOT SOL EN

[4] Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions [J].

Bouttemy, M. ;

Tran-Van, P. ;

Gerard, I. ;

Hildebrandt, T. ;

Causier, A. ;

Pelouard, J. L. ;

Dagher, G. ;

Jehl, Z. ;

Naghavi, N. ;

Voorwinden, G. ;

Dimmler, B. ;

Powalla, M. ;

Guillemoles, J. F. ;

Lincot, D. ;

Etcheberry, A. .

THIN SOLID FILMS, 2011, 519 (21) :7207-7211

[5] Subgrain size inhomogeneities in the luminescence spectra of thin film chalcopyrites [J].

Guetay, Levent ;

Lienau, Christoph ;

Bauer, Gottfried Heinrich .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[6]

Gutay L, 2008, THESIS C VONOSSIETZK

[7]

Jackson P, 2011, PROG PHOTOVOLTAICS, DOI [10.1002/pip1078, DOI 10.1002/PIP1078]

[8]

Kessler J., 1992, Proceedings of the 6th International Photovoltaic Science and Engineering Conference, P1005

[9] Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporation [J].

Schleussner, Sebastian ;

Zimmermann, Uwe ;

Watjen, Timo ;

Leifer, Klaus ;

Edoff, Marika .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (02) :721-726

[10] In-line Cu(In,Ga)Se2 co-evaporation processes with graded band gaps on large substrates [J].

Voorwinden, G ;

Kniese, R ;

Powalla, M .

THIN SOLID FILMS, 2003, 431 :538-542

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