The effect of surface treatment of bottom contact organic thin film transistor

被引：1

作者：

Park, Jin-Seong ^{[2
]}

Jeon, Woo Sik ^{[1
]}

Park, Jung Soo ^{[1
]}

Kwon, Jang Hyuk ^{[1
]}

Suh, Min Chul ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[2] Dankook Univ, Dept Mat Sci & Engn, Cheonan Si 330714, Chungnam, South Korea

来源：

SYNTHETIC METALS | 2011年 / 161卷 / 17-18期

基金：

新加坡国家研究基金会;

关键词：

Organic thin film transistor (OTFT); PMMA; MNB; Contact resistance; Sequence of surface treatment; Wettability; FIELD-EFFECT TRANSISTORS; DISPLAYS; MOBILITY; SHIFT;

D O I：

10.1016/j.synthmet.2011.07.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (Cl) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D. Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5 nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (I(on)), although a bottom contact structure was exploited. The lack of increase in the contact resistance (R(c)) may be due to the difference in wettability between PMMA/Au and PMMA/organic Cl. As a result, the devices treated with PMMA -> MNB showed much better I(on) behavior than those fabricated with MNB -> PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1953 / 1957

页数：5

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