Design and development of batch fabricatable metal-insulator-metal diode and microstrip slot antenna as rectenna elements

被引：59

作者：

Krishnan, S. ^{[1
,2
]}

La Rosa, H. ^{[2
]}

Stefanakos, E. ^{[2
]}

Bhansali, S. ^{[1
]}

Buckle, K. ^{[2
]}

机构：

[1] Univ S Florida, Bio MEMS & Microsyst Lab, Dept Elect Engn, Tampa, FL 33620 USA

[2] Univ S Florida, Coll Engn, Clean Energy Res Ctr, Tampa, FL 33620 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2008年 / 142卷 / 01期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

MIM diode; Ni-NiO-Cr; IR detection; slot antenna;

D O I：

10.1016/j.sna.2007.04.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film Ni-NiO-Cr metal-insulator-metal (MIM) tunnel diodes with 1 mu m(2) contact area and 1-3 nm insulator layer (NiO) are fabricated for high sensitive far-infrared (IR) detection. Also, a 2.5 GHz microstrip slot antenna is fabricated on a FR-4 substrate and integrated with a commercially available surface mount zero bias Schotky diode. Asymmetric current-voltage (I-V) characteristics of the MIM tunnel diode is observed with a significant degree of non-linearity. Additionally, the sensitivity of the MIM diode is determined to be 5 V-1 at V-bias of 0.1 V. For the antenna coupled detector circuit, the radiation patterns, scattering parameters, output voltage and sensitivity are determined experimentally. Further, when the slot antenna is coupled with the schottky diode detector, a rectified output voltage of 56 mV is obtained by radiating the device with a low frequency tube antenna. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：40 / 47

页数：8

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