Optical Properties of Ni doped 3C-SiC with ab initio calculations

被引：0
|
作者：
Houmad, M. [1 ]
Abbassi, A. [1 ]
Benyoussef, A. [1 ,2 ,3 ]
Ez-Zahraouy, H. [1 ]
El Kenz, A. [1 ]
机构：
[1] Fac Sci Rabat, Dept Phys, Lab Magnetism & Phys High Energy, BP 1014, Rabat, Morocco
[2] MASCIR Moroccan Fdn Adv Sci Innovat & Res, Inst Nonmat & Nanotechnol, Rabat, Morocco
[3] Hassan II Acad Sci & Technol, Rabat, Morocco
来源：
2014 INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC) | 2014年
关键词：
Semiconductors; ab initio calculations; electronic structure; optical properties; GENERALIZED GRADIENT APPROXIMATION; ABSORPTION;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
The optical properties of Ni doped 3C-SiC, with different concentrations, were studied by using the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA) and GGA Modified Becke Johnson (GGA-mBJ) within Wien2k package. The obtained results within GGA-mBJ approximation are in good agreement with experimental data. The electrical conductivity increases with increasing Ni concentration in doped 3C-SiC. The optical absorption, transmission and refractive index are also investigated.
引用
收藏
页码：596 / 600
页数：5
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