Optical Properties of Ni doped 3C-SiC with ab initio calculations

被引：0

作者：

Houmad, M. ^{[1
]}

Abbassi, A. ^{[1
]}

Benyoussef, A. ^{[1
,2
,3
]}

Ez-Zahraouy, H. ^{[1
]}

El Kenz, A. ^{[1
]}

机构：

[1] Fac Sci Rabat, Dept Phys, Lab Magnetism & Phys High Energy, BP 1014, Rabat, Morocco

[2] MASCIR Moroccan Fdn Adv Sci Innovat & Res, Inst Nonmat & Nanotechnol, Rabat, Morocco

[3] Hassan II Acad Sci & Technol, Rabat, Morocco

来源：

2014 INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC) | 2014年

关键词：

Semiconductors; ab initio calculations; electronic structure; optical properties; GENERALIZED GRADIENT APPROXIMATION; ABSORPTION;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The optical properties of Ni doped 3C-SiC, with different concentrations, were studied by using the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA) and GGA Modified Becke Johnson (GGA-mBJ) within Wien2k package. The obtained results within GGA-mBJ approximation are in good agreement with experimental data. The electrical conductivity increases with increasing Ni concentration in doped 3C-SiC. The optical absorption, transmission and refractive index are also investigated.

引用

页码：596 / 600

页数：5

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