Simultaneous Interfacial Modification and Defect Passivation for Wide-Bandgap Semitransparent Perovskite Solar Cells with 14.4% Power Conversion Efficiency and 38% Average Visible Transmittance

被引:23
作者
Shi, Hongxi [1 ]
Zhang, Lei [1 ]
Huang, Hao [1 ]
Wang, Xiaoting [1 ]
Li, Ziyu [1 ]
Xuan, Dazhi [1 ]
Wang, Chenyu [1 ]
Ou, Yali [1 ]
Ni, Chaojie [1 ]
Li, Denggao [1 ]
Chi, Dan [1 ]
Huang, Shihua [1 ]
机构
[1] Zhejiang Normal Univ, Prov Key Lab Solid State Optoelect Devices, Jinhua 321004, Zhejiang, Peoples R China
基金
国家重点研发计划;
关键词
defect passivation; high average visible transmittance; interfacial modification; semitransparent perovskite solar cells; wide-bandgap perovskite; GROWTH;
D O I
10.1002/smll.202202144
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perovskite materials offer a great potential in the application of semitransparent solar cells, owing to the tunable bandgap, ease of preparation and excellent photovoltaic property. A majority of works exhibit high average visible-light transmittance (AVT) for semitransparent perovskite solar cells (ST-PSCs) through decreasing perovskite thickness, leading to sacrificing the power conversion efficiency (PCE) of the device. Herein, a wide-bandgap (WBG) perovskite of Cs(0.2)FA(0.8)Pb(I0.6Br0.4)(3) is applied as absorber in ST-PSCs, which is a tremendous progress to balance both large PCE and high AVT. Moreover, a strategy of simultaneous interfacial modification and defect passivation is provided to enhance the performance of WBG ST-PSCs. Consequently, an inverted planar structure WBG perovskite solar cell (PSC) achieves 15.06% of PCE with excellent stability by restraining the interfacial energy loss and suppressing the nonradiative recombination. Furthermore, the ST-PSC obtains high PCE of 14.40% with an AVT of 38% by means of optimizing the transparent electrode. This work provides an efficient and simple method to improve the performance and AVT of ST-PSCs for the application in building-integrated photovoltaics.
引用
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页数:11
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