A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

被引：44

作者：

Tran, X. A. ^{[1
]}

Yu, H. Y. ^{[1
]}

Yeo, Y. C. ^{[2
]}

Wu, L. ^{[1
]}

Liu, W. J. ^{[1
]}

Wang, Z. R. ^{[1
]}

Fang, Z. ^{[1
]}

Pey, K. L. ^{[1
]}

Sun, X. W. ^{[1
]}

Du, A. Y. ^{[3
]}

Nguyen, B. Y. ^{[4
]}

Li, M. F. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[3] GLOBALFOUNDRIES, Singapore 738406, Singapore

[4] Soitec, F-38926 Crolles, France

[5] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

HfOx; resistive random access memory (RRAM); unipolar resistive switching (RS); HIGH-DENSITY;

D O I：

10.1109/LED.2010.2099205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a resistive random access memory based on Ni electrode/HfOx dielectric/n(+) Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high ON/OFF resistance ratio (>10(3)), good retention characteristics (>10(5) s at 150 degrees C), satisfactory pulse switching endurance (>10(5) cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.

引用

页码：396 / 398

页数：3

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