Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering

被引：4

作者：

Nagata, Kohki ^{[1
,2
]}

Ogura, Atsushi ^{[2
]}

Hirosawa, Ichiro ^{[3
]}

Suwa, Tomoyuki ^{[4
]}

Teramoto, Akinobu ^{[4
]}

Ohmi, Tadahiro ^{[4
]}

机构：

[1] Tokyo Metropolitan Ind Technol Res Inst, Koto Ku, 2-4-10 Aomi, Tokyo 1350064, Japan

[2] Meiji Univ, Sch Sci & Technol, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan

[3] Japan Synchrotron Radiat Res Inst JASRI, 1-1-1 Kouto, Sayo, Hyogo 6795198, Japan

[4] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, 6-6-10 Aramakiazaaoba, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 15期

基金：

日本学术振兴会;

关键词：

THERMAL-OXIDATION; SYNCHROTRON-RADIATION; DIFFRACTION; INTERFACE; STRESS; SILICA; GLASS; MECHANISM; EMISSION; DENSITY;

D O I：

10.1063/1.4947053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the fabrication process conditions on the microstructure of silicon dioxide thin films of <10 nm thickness are presented. The microstructure was investigated using grazing-incidence wide and small-angle X-ray scattering methods with synchrotron radiation. The combination of a high brilliance light source and grazing incident configuration enabled the observation of very weak diffuse X-ray scattering from SiO2 thin films. The results revealed different microstructures, which were dependent on oxidizing species or temperature. The micro-level properties differed from bulk properties reported in the previous literature. It was indicated that these differences originate from inner stress. The detailed structure in an amorphous thin film was not revealed owing to detection difficulties. Published by AIP Publishing.

引用

页数：5

共 36 条

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