An RT-level fault model with high gate level correlation

被引:13
作者
Corno, F [1 ]
Cumani, G [1 ]
Reorda, MS [1 ]
Squillero, G [1 ]
机构
[1] Politecn Torino, Dipartimento Automat & Informat, I-10129 Turin, Italy
来源
IEEE INTERNATIONAL HIGH-LEVEL DESIGN VALIDATION AND TEST WORKSHOP, PROCEEDINGS | 2000年
关键词
D O I
10.1109/HLDVT.2000.889551
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
With the advent of new the RT-level design and test flows, neu tools are needed to migrate at the RT-level the activities of fault simulation, testability analysis, and test pattern generation. This paper focuses on fault simulation at the RT-level, and aims at exploiting the capabilities of VHDL simulators to compute faulty responses. The simulator was implemented as a prototypical tool, and experimental results show that simulation of a faulty circuit is no more costly than simulation of the original circuit. The reliability of the fault cover-age figures computed at the RT-level is increased thanks to an analysis of inherent VHDL redundancies, and by foreseeing classical synthesis optimizations. A set of "rules" is used to complete a fault list that exhibits good correlation with stuck-at faults.
引用
收藏
页码:3 / 8
页数:6
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