Epitaxial growth of a silicene sheet

被引：1224

作者：

Lalmi, Boubekeur ^{[1
]}

Oughaddou, Hamid ^{[2
,3
]}

Enriquez, Hanna ^{[2
,4
]}

Kara, Abdelkader ^{[3
,5
]}

Vizzini, Sebastien ^{[6
]}

Ealet, Benidicte ^{[1
]}

Aufray, Bernard ^{[1
]}

机构：

[1] CINaM CNRS, F-13288 Marseille, France

[2] CEA, DSM IRAMIS SPCSI, F-91191 Gif Sur Yvette, France

[3] Univ Cergy Pontoise, Dept Phys, F-95000 Cergy Pontoise, France

[4] Univ Paris 11, Dept Phys, F-91405 Orsay, France

[5] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[6] Aix Marseille Univ, IM2NP, Fac Sci St Jerome, F-13397 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

关键词：

D O I：

10.1063/1.3524215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp(2)-sp(3) hybridizations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524215]

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页数：2

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