Pulse-mode selective MOVPE method for high-quality strained InGaAsP MQW structure

被引：1

作者：

Sakata, Y ^{[1
]}

Inomoto, Y ^{[1
]}

Komatsu, K ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Otsu, Shiga 5200833, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulse-mode selective MOVPE on a narrow stripe region was investigated for achieving excellent crystal quality of InGaAsP/InGaAsP strained MQW structure. The flatness of selectively grown InGaAsP layers were drastically improved by pulse-mode epitaxy due to the enhanced migration effect. Furthermore, very narrow photoluminescence spectrum linewidth of 28meV at 25 degrees C for strained MQW structure was realized. The 1.3 mu m-wavelength buried heterostructure (BH) laser diode (LD) which has a strained MOW active layer grown by the pulse-mode selective MOVPE showed the record low-operation current at a high temperature of 100 degrees C.

引用

页码：317 / 320

页数：4