Controlled fabrication of 1D molecular lines across the dimer rows on the Si(100)-(2x1)-H surface through the radical chain reaction

被引:78
作者
Hossain, Z [1 ]
Kato, HS
Kawai, M
机构
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Univ Tokyo, Dept Adv Mat, Kashiwa, Chiba 2778501, Japan
关键词
D O I
10.1021/ja055515a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Current interest in the fabrication of organic nanostructures on silicon surface is focused on the self-directed growth of 1D molecular lines with predefined position, structure, composition, and the length on the H-terminated Si(100)-(2 × 1) surface. To date, no studies have succeeded in growing the molecular line across the dimer rows on Si(100)-(2 × 1)-H, which is highly desirable. Using scanning tunneling microscopy (STM), we studied a newmolecular system (allyl mercaptan, CH2=CH-CH2-SH) that undergoes chain reaction across the dimer row on the Si(100)-(2 × 1)-H surface at 300 K and produces covalently bonded 1D molecular lines. In combination with the previous findings of chain reaction along the rows, the present observations of self-directed growth of 1D molecular lines across the dimer rows on the Si(100)-(2 × 1)-H surface provide a means to connect any two points (through molecular lines) on a 2D surface. Copyright © 2005 American Chemical Society.
引用
收藏
页码:15030 / 15031
页数:2
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