Structural and optical properties of Cu nanoparticles embedded in Si3N4/Si by ion implantation

被引：8

作者：

Zhang, X. D. ^{[1
]}

Liu, C. L. ^{[1
,2
]}

Guo, M. L. ^{[3
]}

Li, W. X. ^{[1
]}

Yin, L. J. ^{[1
]}

Lue, Y. Y. ^{[1
]}

Wang, Z. ^{[1
]}

Wu, P. ^{[1
]}

Liu, T. Y. ^{[1
]}

Li, M. K. ^{[1
]}

Yuan, B.

机构：

[1] Tianjin Univ, Sch Sci, Dept Appl Phys, Tianjin 300072, Peoples R China

[2] Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

[3] Tianjin Inst Urban Construct, Dept Fundamental Subject, Tianjin 300384, Peoples R China

来源：

OPTICAL MATERIALS | 2008年 / 30卷 / 09期

基金：

中国国家自然科学基金;

关键词：

nanoparticles; ion implantation; photoluminescence; surface plasmon resonance;

D O I：

10.1016/j.optmat.2007.07.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu nanoparticles (NPs) have been fabricated in Si(3)N(4)/Si by 45 keV Cu ion implantation at a dose of 1 x 10(17) cm(-2), and followed by thermal processing at 500-700 degrees C in air. Techniques, such as atomic force microscopy and X-ray diffraction are used to confirm the formation and evolutions of Cu NPs. The surface plasmon resonance of Cu NPs has been investigated by reflection spectroscopy. The orange-red luminescence band (600 nm) with high fluorescence quantum efficiency has been observed in Cu NPs, and its possible mechanism has also been discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1382 / 1386

页数：5

共 35 条

[1]

Alivisatos A. P., 1996, J PHYS CHEM-US, V100, P13266

[2] Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence [J].

Amekura, H ;

Umeda, N ;

Sakuma, Y ;

Plaksin, OA ;

Takeda, Y ;

Kishimoto, N ;

Buchal, C .

APPLIED PHYSICS LETTERS, 2006, 88 (15)

[3] Cupric oxide nanoparticles in SiO2 fabricated by copper-ion implantation combined with thermal oxidation -: art. no. 153105 [J].

Amekura, H ;

Kono, K ;

Takeda, Y ;

Kishimoto, N .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[4] Microstructural changes in silicon thermal oxide induced by high-flux copper negative-ion implantation [J].

Amekura, H ;

Umeda, N ;

Okubo, N ;

Lee, CG ;

Takeda, Y ;

Kishimoto, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :345-349

[5] PHOTOINDUCED LUMINESCENCE FROM THE NOBLE-METALS AND ITS ENHANCEMENT ON ROUGHENED SURFACES [J].

BOYD, GT ;

YU, ZH ;

SHEN, YR .

PHYSICAL REVIEW B, 1986, 33 (12) :7923-7936

[6]

Chris D G, 2003, CHEM PHYS LETT, V380, P269

[7] ABSOLUTE X-RAY SCATTERING FACTORS OF SILICON AND GERMANIUM [J].

DEMARCO, JJ ;

WEISS, RJ .

PHYSICAL REVIEW, 1965, 137 (6A) :1869-&

[8] Spectroscopic properties and quantum yield of Cu-doped SiO2 glass [J].

Fujimoto, Y ;

Nakatsuka, M .

JOURNAL OF LUMINESCENCE, 1997, 75 (03) :213-219

[9] Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation [J].

Fukumi, K ;

Chayahara, A ;

Ohora, K ;

Kitamura, N ;

Horino, Y ;

Fujii, K ;

Makihara, M ;

Hayakaya, J ;

Ohno, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 149 (1-2) :77-80

[10]

GRAETZEL M, 1992, ELECTROCHEMISTRY COL

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