53% PAE 32W iniaturized X-band. GaN HEMT Power MMICs

被引：0

作者：

Ono, Naoko ^{[1
]}

Senju, Tomohiro ^{[1
]}

Takagi, Kazutaka ^{[1
]}

机构：

[1] Toshiba Infrastruct Syst & Solut Corp, Core Technol Dept, Saiwai Ku, Komukai Complex,1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128581, Japan

来源：

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年

关键词：

gallium nitride; NIMIC; power amplifier; power added efficiency; X-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a miniaturized high efficiency X-hand power amplifier MMIC with 0.25 p.m AlGaN/GaN HEMT on SIC technology. Class-F two-stage NIMICs are designed and fabricated, and the chip size is 3.0 mm x 3.3 mm. The MMICs had an output power of 45.1 dBm (32.4W), a power added efficiency of 53.4% and an associated gain of 15.1 dB with a drain voltage of 36 V at 9.3GHz.

引用

页码：557 / 559

页数：3

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