Beyond silicon carbide!: III-V nitride based heterostructures and devices

被引：11
作者：
Morkoç, H [1 ]
机构：
[1] Virginia Commonwealth Univ, Dept Elect Engn & Phys, Richmond, VA 23284 USA
来源：
SIC MATERIALS AND DEVICES | 1998年 / 52卷
关键词：
D O I：
10.1016/S0080-8784(08)62850-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：307 / 394
页数：88
相关论文
共 114 条
[1]   WIDEGAP COLUMN-III NITRIDE SEMICONDUCTORS FOR UV/BLUE LIGHT-EMITTING DEVICES [J].
AKASAKI, I ;
AMANO, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) :2266-2271
[2]   Shortest wavelength semiconductor laser diode [J].
Akasaki, I ;
Sota, S ;
Sakai, H ;
Tanaka, T ;
Koike, M ;
Amano, H .
ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106
[3]   Microwave performance of AlGaN/GaN inverted MODFET's [J].
Aktas, O ;
Fan, ZF ;
Botchkarev, A ;
Mohammad, SN ;
Roth, M ;
Jenkins, T ;
Kehias, L ;
Morkoc, H .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (06) :293-295
[4]  
AKTAS O, 1995, IEDM WASH DC
[5]  
AKTAS O, 1996, APPL PHYS LETT, V69, P1420
[6]  
AKTAS O, 1995, ELECTRON LETT, V31, P1389
[7]   EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE [J].
AMANO, H ;
AKASAKI, I ;
HIRAMATSU, K ;
KOIDE, N ;
SAWAKI, N .
THIN SOLID FILMS, 1988, 163 :415-420
[8]   HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES [J].
AMANO, H ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1384-L1386
[9]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[10]  
AMANO H, 1988, JPN J APPL PHYS, V27, P1156
12345678910