Structural and Thermo-Physical Properties of 3C-SiC: High-Temperature and High-Pressure Effects

被引:17
|
作者
Daoud, Salah [1 ]
Bouarissa, Nadir [2 ]
Rekab-Djabri, Hamza [3 ,4 ]
Saini, Pawan Kumar [5 ]
机构
[1] Univ Mohamed Elbachir El Ibrahimi Bordj Bou Arrer, Lab Mat & Syst Elect, Bordj Bou Arreridj 34000, Algeria
[2] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria
[3] Oran ENP, Lab Micro & Nanophys LaMiN, BP 1523, Oran 31000, Algeria
[4] Akli Mohand Oulhadj Univ, Fac Nat & Life Sci & Earth Sci, Bouira 10000, Algeria
[5] Govt Coll, Dept Phys, Hansi 125033, Haryana, India
关键词
Silicon carbide; Thermodynamic properties; High-pressure; Quasi-harmonic Debye model; High temperature; PHASE-TRANSITION; THERMOPHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; ELECTRONIC-STRUCTURE; ZINCBLENDE; DEPENDENCE; SILICON; DYNAMICS; ALLOYS; STATE;
D O I
10.1007/s12633-021-01387-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Based on the density functional theory (DFT), a systematic theoretical investigation on the structural parameters and finite temperature thermo-physical properties of cubic silicon carbide (3C-SiC) is reported. Our results regarding the structural parameters, melting point, Knoop micro hardness, and thermal conductivity show generally satisfactory accord with experiment and other calculated findings of the present literature. The material of interest is predicted to transform from the zinc-blende (B3) phase to the rock-salt phase (B1) at a pressure of around 70 GPa, which corresponds to a volume collapse of around 18.1%. This agrees well with several experimental and previous theoretical data. Based on the Debye model, the thermo-physical properties at temperatures up to 2000 K and for pressures up to 70 GPa are analyzed and discussed. The authors' results show a monotonous change of the thermo-physical properties of the material in question against temperature or pressure. This accords well with the general trend commonly reported in the present literature.
引用
收藏
页码:6299 / 6309
页数:11
相关论文
共 50 条
  • [21] High-field and high-temperature, transport in n-type 3C-SiC
    Zhang, YM
    Zhang, YM
    1999 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, 1999, : 79 - 82
  • [22] High-pressure high-temperature EXAFS and Debye-Waller factor of platinum
    Lam, Le Thu
    Hung, Vu Van
    Hieu, Ho Khac
    VACUUM, 2024, 224
  • [23] High-pressure structural properties of tetramethylsilane
    Qin, Zhen-Xing
    Chen, Xiao-Jia
    CHINESE PHYSICS B, 2016, 25 (02)
  • [24] High-temperature and high-pressure PVT measurements and derived thermodynamic properties of geothermal fluids from East Turkey
    Talybov, Misirkhan A.
    Abdulagatov, Ilmutdin M.
    GEOTHERMICS, 2021, 95 (95)
  • [25] Structural phase transitions of C60 under high-pressure and high-temperature
    Alvarez-Murga, M.
    Hodeau, J. L.
    CARBON, 2015, 82 : 381 - 407
  • [26] An application of a high-temperature and high-pressure reactor
    Rybár, P
    Lazar, T
    Hamrák, H
    Demcák, M
    Domaradsky, D
    METALURGIJA, 2002, 41 (03): : 139 - 142
  • [27] First-principles study of high-pressure physical properties of α-Ti2Zr
    Zhang Pin-Liang
    Gong Zi-Zheng
    Ji Guang-Fu
    Liu Song
    ACTA PHYSICA SINICA, 2013, 62 (04)
  • [28] SYNCHROTRON HIGH-PRESSURE HIGH-TEMPERATURE TECHNIQUES
    Mezouar, Mohamed
    HIGH-PRESSURE CRYSTALLOGRAPHY: FROM FUNDAMENTAL PHENOMENA TO TECHNOLOGICAL APPLICATIONS, 2010, : 23 - 33
  • [29] New High-Pressure and High-Temperature CaCO3 Polymorph
    Druzhbin, Dmitrii
    V. Rashchenko, Sergey
    Shatskiy, Anton
    Crichton, Wilson A.
    ACS EARTH AND SPACE CHEMISTRY, 2022, 6 (06): : 1506 - 1513
  • [30] First-principles investigation of effects of defects on the physical properties of 3C-SiC under high temperatures and pressures
    Fan, Touwen
    Liu, Wei
    Ruan, Zixiong
    Cao, Yuxin
    Ye, Tuo
    Liu, Jinzhong
    Zhong, Feng
    Tan, Xiaochao
    Liang, Houjiang
    Chen, Dongchu
    Tang, Pingying
    Wu, Yuanzhi
    JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, 20 : 3633 - 3645