Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching

被引：34

作者：

Kneissl, M ^{[1
]}

Hofstetter, D ^{[1
]}

Bour, DP ^{[1
]}

Donaldson, R ^{[1
]}

Walker, J ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

nitrides; GaN; dry-etching; CAIBE; mirror; laser diode;

D O I：

10.1016/S0022-0248(98)00307-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are obtained which exhibit a root mean squared (rms) roughness of only 40-60 Angstrom. The inclination angle of the etched mirrors is within +/- 2 degrees of vertical, as SEM studies indicate. Photopumping measurements reveal that the reflectivity of the etched mirrors corresponds to 60-70% of the value for an ideal GaN/air interface. The reduced reflectivity may be due to surface roughness, a slight tilt In the facet angle, and the excitation of higher-order transverse waveguide modes in the laser structure. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：846 / 849

页数：4

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