High-performance InGaAs/InP single-photon avalanche photodiode

被引：70

作者：

Liu, Mingguo ^{[1
]}

Hu, Chong

Bai, Xiaogang

Guo, Xiangyi

Campbell, Joe C.

Pan, Zhong

Tashima, M. M.

机构：

[1] Univ Virginia, Sch Engn & Appl Sci, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] JDS Uniphase Corp, Milpitas, CA 95035 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2007年 / 13卷 / 04期

关键词：

afterpulsing; array; avalanche photodiodes; dark count rate (DCR); single-photon detection efficiency (SPDE); timing resolution;

D O I：

10.1109/JSTQE.2007.903855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.53Ga0.47As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mu m-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mu m), low dark count rate (DCR = 12 kHz), and low noise-equivalent power (NEP = 4.5 X 10(-17) W/HZ(1/2)) at 200 K and 1.31 mu m. A timing resolution of 140 ps was achieved with an SPDE of 45%. In addition, the dark current and DCR of a 4 x 4 SPAD array are reported.

引用

页码：887 / 894

页数：8

共 20 条

[1] TRAPPING PHENOMENA IN AVALANCHE PHOTODIODES ON NANOSECOND SCALE [J].

COVA, S ;

LACAITA, A ;

RIPAMONTI, G .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :685-687

[2] PHOTON-COUNTING TECHNIQUES WITH SILICON AVALANCHE PHOTODIODES [J].

DAUTET, H ;

DESCHAMPS, P ;

DION, B ;

MACGREGOR, AD ;

MACSWEEN, D ;

MCINTYRE, RJ ;

TROTTIER, C ;

WEBB, PP .

APPLIED OPTICS, 1993, 32 (21) :3894-3900

[3] Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm [J].

Hiskett, PA ;

Buller, GS ;

Loudon, AY ;

Smith, JM ;

Gontijo, I ;

Walker, AC ;

Townsend, PD ;

Robertson, MJ .

APPLIED OPTICS, 2000, 39 (36) :6818-6829

[4]

ITZLER MA, 1999, P 12 ANN M LAS EL OP, V2, P748

[5] Afterpulsing in Geiger-mode avalanche photodiodes for 1.06 μm wavelength [J].

Jensen, KE ;

Hopman, PI ;

Duerr, EK ;

Dauler, EA ;

Donnelly, JP ;

Groves, SH ;

Mahoney, LJ ;

McIntosh, KA ;

Molvar, KM ;

Napoleone, A ;

Oakley, DC ;

Verghese, S ;

Vineis, CJ ;

Younger, RD .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[6] Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection [J].

Kang, Y ;

Lu, HX ;

Lo, YH ;

Bethune, DS ;

Risk, WP .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2955-2957

[7] Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode [J].

Karve, G ;

Zheng, XG ;

Zhang, XF ;

Li, XW ;

Li, N ;

Wang, SL ;

Ma, F ;

Holmes, A ;

Campbell, JC ;

Kinsey, GS ;

Boisvert, JC ;

Isshiki, TD ;

Sudharsanan, R ;

Bethune, DS ;

Risk, WP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (10) :1281-1286

[8] Single-photon detection beyond 1 mu m: Performance of commercially available InGaAs/InP detectors [J].

Lacaita, A ;

Zappa, F ;

Cova, S ;

Lovati, P .

APPLIED OPTICS, 1996, 35 (16) :2986-2996

[9] 1.52-MU-M ROOM-TEMPERATURE PHOTON-COUNTING OPTICAL-TIME DOMAIN REFLECTOMETER [J].

LEVINE, BF ;

BETHEA, CG ;

CAMPBELL, JC .

ELECTRONICS LETTERS, 1985, 21 (05) :194-196

[10] Low dark count rate and high single-photon detection efficiency avalanche photodiode in Geiger-mode operation [J].

Liu, Mingguo ;

Bai, Xiaogang ;

Hu, Chong ;

Guo, Xiangyi ;

Campbell, Joe C. ;

Pan, Zhong ;

Tashima, Mark M. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (5-8) :378-380

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