Integration of Vertical Carbon Nanotube Bundles for Interconnects

被引：25

作者：

Chiodarelli, Nicolo ^{[1
,2
]}

Kellens, Kristof ^{[1
]}

Cott, Daire J. ^{[1
]}

Peys, Nick ^{[1
,4
]}

Arstila, Kai ^{[1
]}

Heyns, Marc ^{[1
,3
]}

De Gendt, Stefan ^{[1
,4
]}

Groeseneken, Guido ^{[1
,2
]}

Vereecken, Philippe M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Met & Mat Engn Dept, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 10期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH;

D O I：

10.1149/1.3473810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Carbon nanotubes (CNTs) are considered a promising material for interconnects for future generation microchips. The integration of vertical CNT in a processing environment is evaluated in this work. Extrapolated performances of CNT-based interconnects are compared with existing technologies at different hierarchy levels including the limitations of present deposition methods for copper and tungsten. For practical implementation, CNT bundles were selectively grown into contact holes using physical vapor deposited and electrochemical deposited cobalt or nickel catalysts. A polishing step was used to control the CNT length after embedding the CNT into an oxide matrix. A CNT metal decoration method based on electrodeposition is presented, which can be used to assess the yield of electrically conductive CNT as well as to form top contacts for electrical characterization. Finally, the importance of having suitable and robust structures for evaluating the integration process is highlighted after the electrical characterization of CNT in a nanoprober station. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3473810] All rights reserved.

引用

页码：K211 / K217

页数：7

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