An overview of SiC growth

被引：13

作者：

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

bulk growth; doping; epitaxial growth; heteroepitaxy; homoepitaxy; step bunching; step-controlled epitaxy;

D O I：

10.4028/www.scientific.net/MSF.338-342.125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview of SiC crystal growth mainly for device application is given. Bulk growth including recent development is briefly reviewed. Epitaxial growth involving both heteroepitaxy and homoepitaxy is described. The concept of step-controlled epitaxy to obtain high-quality homoepitaxial layers is introduced, and the step bunching peculiar to this method is discussed. Doping characteristics during homoepitaxial growth is described. New techniques for production of SiC epitaxial layers are introduced. Finally, a future prospect in crystal growth is given.

引用

页码：125 / 130

页数：6

共 25 条

[1]

AUGSTINE G, 1998, MATER SCI FORUM, V264, P9

[2] SiC epitaxial layer growth in a novel multi-wafer VPE reactor [J].

Burk, AA ;

O'Loughlin, MJ ;

Mani, SS .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :83-88

[3]

CHEN ZY, UNPUB JPN J APPL PHY

[4]

ELLISON A, 1998, ECSCRM 98, P25

[5] CVD growth and characterisation of SiC epitaxial layers on faces perpendicular to the (0001) basal plane [J].

Hallin, C ;

Ellison, A ;

Ivanov, IG ;

Henry, A ;

Son, NT ;

Janzen, E .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :123-126

[6] Atomically flat 3C-SiC epilayers by low pressure chemical vapor deposition [J].

Ishida, Y ;

Takahashi, T ;

Okumura, H ;

Yoshida, S ;

Sekigawa, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (11) :6633-6637

[7] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

JENNINGS, VJ ;

SOMMER, A ;

CHANG, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :728-&

[8] GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY [J].

KIMOTO, T ;

NISHINO, H ;

YOO, WS ;

MATSUNAMI, H .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) :726-732

[9] STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES [J].

KIMOTO, T ;

ITOH, A ;

MATSUNAMI, H .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3645-3647

[10] SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES [J].

KIMOTO, T ;

MATSUNAMI, H .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :850-859

← 1 2 3 →