ZnO Thin Films Synthesized by Sol-Gel Process for Photonic Applications

Undoped and aluminum-doped ZnO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol and monoethanolamine are used as precursor, solvent and stabilizer, respectively. In the case of Al-doped ZnO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 or 2 at.% Al. The multi thin layers are prepared by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 degrees C. Films with preferential orientation along the c-axis are successfully obtained. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated for different elaboration parameters (e.g. layer number) using X-ray diffraction, atomic force microscopy, scanning electronic microscopy. Waveguiding properties of the thin films have been also studied using in-lines spectroscopy. The results indicate that our films are monomodes at 632.8 nm with propagation optical loss estimated around 1.6 dB/cm.