A Fully Integrated X-Band Phased-Array Transceiver in 0.13-μm CMOS Technology

被引:1
作者
Wang, Ruitao [1 ]
Wang, Zhikai [1 ]
Yin, Sen [1 ]
Zhang, Jian [1 ]
Wang, Yan [1 ]
机构
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源
2021 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2021年
关键词
CMOS; X-band; phased array; transceiver; attenuator; phase shifter;
D O I
10.1109/RFIT52905.2021.9565276
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an X-band common-leg phased-array transceiver in 0.13-mu m CMOS technology. The design based on the all-RF architecture contains a 6-bit phase shifter (PS), a 6-bit attenuator, single pole double through switches (SPDT), a low-noise amplifier (LNA), a power amplifier (PA), and several loss compensation amplifiers (LCA). The phased-array transceiver achieves a 31.5 dB gain adjustment range with 0.5 dB step in RX path and 360 degrees phase adjustment range with 5.625 degrees resolution in both RX/TX paths. In the receive mode, the receiver demonstrates a gain of 12 dB, root means square (RMS) phase error less than 43 degrees, and an RMS gain error less than 0.44 dB, from 9 to 10.5 GHz, with 120-mW de power consumption. In the transmit mode, the transmitter achieves a gain of 20 dB, an output P-1dB of 9.7dBm, and an RMS phase error less than 3.8 degrees, from 9 to 10.5 GHz, with 250-mW de power consumption. The whole transceiver occupies a 3.9x4.4 mm(2) chip area, including the testing pads.
引用
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页数:3
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